| PART |
Description |
Maker |
| CDBZ3860L-HF |
Halogen Free Low VF Schottky Barrier, V-RRM=60V, V-R=60V, I-O=8A
|
Comchip Technology
|
| 2SA1290 |
60V/7A High-Speed Switching Applications 60V/7A高速开关应
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SB1370 2SB1565 2SB1565F 2SB1655 |
Power Transistor (-60V/ -3A)
Power Transistor (-60V, -3A)
Power Transistor (-60V -3A)
Power Transistor(-60V, -3A)
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits
|
ROHM[Rohm]
|
| IRFIZ48V IRFIZ48 IRFIZ48VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A)
|
IRF[International Rectifier]
|
| IRFP048 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
|
International Rectifier
Power MOSFET
|
| IRFL014 IRFL014TR |
60V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)
|
International Rectifier
|
| IRFZ48V IRFZ48VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)
|
IRF[International Rectifier]
|
| 2SB834 2SB834O 2SB834Y |
POWER TRANSISTORS(3.0A,60V,30W)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
MOSPEC[Mospec Semiconductor]
MOSPEC SEMICONDUCTOR CORP.
Mospec Semiconductor, Corp.
|
| IRF1010E IRF1010EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份证\u003d 84A条?
Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A
|
International Rectifier, Corp.
|
| NDT2955 NDT2955J23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 2.5AI（四）|的SOT - 223
P-Channel Enhancement Mode Field Effect Transistor2.5A60V.3ΩP沟道增强型场效应管（漏电2.5A, 漏源电压-60V，导通电.3Ω
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
